Profile of Dr. Md. Dulal Haque

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Dr. Md. Dulal Haque

Associate Professor

Department of Electronics and Communication Engineering (ECE)

Faculty of Computer Science and Engineering

Hajee Mohammad Danesh Science & Technology University, Dinajpur.

E-mail: dhaque@hstu.ac.bd


RESEARCH INTEREST

    Recombination Mechanism in III-V Intermediate Band Solar Cell Semiconductors, Defects in III-V Nitride Based Semiconductors, Functional Materials for Energy Harvesting Technology

EDUCATION

  1. Ph.D. in Compound Semiconductors Devices, 2018

    Saitama University, Japan

  2. M. Sc. in Applied Physics & Electronic Engineering, 2005

    Rajshahi University, BANGLADESH

  3. B. Sc. (Honours) in Applied Physics & Electronics, 2004

    Rajshahi University, BANGLADESH


PROFESSIONAL EXPERIENCES

  1. Associate Professor
    Hajee Mohammad Danesh Science & Technology University, Dinajpur, BANGLADESH

    February 01, 2019 to Present

  2. PhD Research Fellow
    Saitama University, Japan

    October 01, 2015 to September 21, 2018

  3. Assistant Professor
    Hajee Mohammad Danesh Science & Technology University, Dinajpur, BANGLADESH

    February 01, 2014 to January 31, 2019

  4. Lecturer
    Hajee Mohammad Danesh Science & Technology University, Dinajpur, BANGLADESH

    February 01, 2012 to January 31, 2014

  5. Assistant Professor
    International Islamic University Chittagong, Bangladesh.

    November 30, 2011 to January 31, 2012

  6. Lecturer
    International Islamic University Chittagong, Bangladesh.

    August 16, 2007 to October 29, 2011


PUBLICATIONS

Journal Papers

  1. M. D. Haque, N. Kamata, A. Z. M. T. Islam, Z. Honda, S. Yagi, and H. Yaguchi, Photoluminescence Characterization of Non-radiative Recombination Centers in MOVPE Grown GaAs:N delta-doped Superlattice Structure, Journal of Optical Materials, 89, 521 (2019).
  2. M. D. Haque, N. Kamata, S-I. Sato, and S. M. Hubbard,Characterization of Nonradiative Recombination Centers in Proton-Irradiated InAs/GaAs Quantum Dots by Two Wavelength Excited Photoluminescence, Japanese Journal of Applied Physics, 57, 092302, (2018).

  3. M. D. Haque, N. Kamata, T. Fukuda, Z. Honda, S. Yagi, H. Yaguchi, and Y. Okada, Non-radiative Recombination Centers in GaAs:N delta-doped Superlattice Reavealed by Two-wavelength Excited Photoluminescence, Journal of Applied Physics, 123,  161426(2018).
  4. M. D. Haque, M. Julkarnain, A.Z. M. T. Islam, N. Kamata, and T. Fukuda,Study of Nonradiative Recombination Centers in n-GaN grown on LT- GaN and AlN Buffer Layer by Below-Gap Excitation, Advances in Material Physics and Chemistry, 8, 143, (2018).
  5. N. Kamata, M. Suetgugu, M. D. Haque, S. Yagi, H. Yaguchi, F. Karlsson and Per Olof Holtz, Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation, Physica Status Solidi B 254, 1 (2016).

  6. M. K. Hossain, M. D. Haque, S. Sarkar, M. A. Ali, M. M. Rahman, and M. M. Hossain, Performance analysis of intermediate band Solar Cell, American Journal of Engineering Research, 4(4) 145 (2015).

  7. M. D. Haque, M. M. Islam, M. M. Hossain and N. Sultana, Modeling and design of photovoltaic solar pannel, Institute of Engineering and Technology, 4(1) 12 (2014).
  8. M. D. Haque, M. M. Islam, M. M. Hossain, and S. Sarker, Simulation and Modeling of silicon nanowire field effect transistor, Journal of Innovation and Development Strategy, 7(1) 16 (2013).

  9. M. D. Haque, M. M. Hossain, M. M. Islam and M. M. Afzal, Modeling of photonic materials for carbon nanotube, Journal of Bangladesh Research Publications 8(1),260 (2013).


Conference Papers

  1.  C. Negishi, M. D. Haque, N. Kamata, Z. Honda, and H. Yaguchi,Carrier Recombination Processes via Intermediate Band in GaPN Revealed by Two-Wavelength Excited Photoluminescenc, International Workshop in Nitride Semiconductor (IWN2018), 11-16 November, 2018, Kanazawa, Japan.    

  2. M. D. Haque, N. Kamata, T. Fukuda, Z. Honda, S. Yagi, H. Yaguchi, and Y. Okada, Detection of Non-radiative Recombination Centers in GaAs:N delta-doped Superlattice, The 29th International Conference on Defect in Semiconductors (ICDS-29), July 31 August 4, 2017, Matsue, Japan.    

  3. M. D. Haque, M. Julkarnain, N. Kamata, and T. Fukuda,Reduction of Defect States in n-GaN Due to AlN Underlayer Revealed by Below-Gap Excitation, The 12th International Conference on Nitride Semiconductors (ICNS-12), July 24-28, 2017, Strasbourg, France.    

  4. C. Negishi, N. Kamata, M. D. Haque, T. Fukuda, and H. Yaguchi,Radiative and Nonradiative Recombination Processes via Intermediate Band in GaPN by Two-Wavelength Excited Photoluminescence, The 12th International Conference on Nitride Semiconductors (ICNS-12), July 24-28, 2017, Strasbourg, France.

  5. M. D. Haque, N. Kamata, S-I. Sato, and S. M. Hubbard, Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two-wavelength Excited Photoluminescence, 44th IEEE Photovoltaic Specialist Conference (IEEE PVSC-44), June 25- 30, 2017, Washington D.C, USA.    

  6. N. Kamata, M. Suetgugu, M.D. Haque, S. Yagi, H. Yaguchi, F. Karlsson and Per Olof Holtz,Carrier Recombination levels in Intermediate Band type GaPN Revealed by Time Resolved and Two-wavelength Excited Photoluminescence, Compound Semiconductor Week (CSW), May 14-18, 2017, Berlin, Germany.    

SCHOLARSHIPS

  1. MONBUKAGAKUSHO:MEXT Scholarship

    Funded by: The Ministry of Education, Culture, Sports, Science, and Technology, Japan

  2. B.Sc (Hounours) Merit School

    Funded by: Rajshahi University