Profile of Dr. Md. Dulal Haque

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Dr. Md. Dulal Haque

Professor

Department of Electronics and Communication Engineering (ECE)

Faculty of Computer Science and Engineering

Hajee Mohammad Danesh Science & Technology University, Dinajpur.

E-mail: dhaque@hstu.ac.bd

Mobile: +8801712534968


RESEARCH INTEREST

    Solar Cell Semiconductors Devices, IOT Devices, Machine Learning and Deep Learning for Real-time Data Processing.

EDUCATION

  1. Ph.D. in Compound Semiconductors Devices, 2018

    Saitama University, Japan

  2. M. Sc. in Applied Physics & Electronic Engineering, 2005

    Rajshahi University, BANGLADESH

  3. B. Sc. (Honours) in Applied Physics & Electronics, 2004

    Rajshahi University, BANGLADESH


PROFESSIONAL EXPERIENCES

  1. Associate Professor
    Hajee Mohammad Danesh Science & Technology University, Dinajpur, BANGLADESH

    February 01, 2019 to Present

  2. PhD Research Fellow
    Saitama University, Japan

    October 01, 2015 to September 21, 2018

  3. Assistant Professor
    Hajee Mohammad Danesh Science & Technology University, Dinajpur, BANGLADESH

    February 01, 2014 to January 31, 2019

  4. Lecturer
    Hajee Mohammad Danesh Science & Technology University, Dinajpur, BANGLADESH

    February 01, 2012 to January 31, 2014

  5. Assistant Professor
    International Islamic University Chittagong, Bangladesh.

    November 30, 2011 to January 31, 2012

  6. Lecturer
    International Islamic University Chittagong, Bangladesh.

    August 16, 2007 to October 29, 2011


PUBLICATIONS

Journal Papers

  1. M D Haque, M H Ali, M F Rahman, and A Z M T Islam, “Numerical analysis for the efficiency enhancement of MoS2 solar cell: A simulation approach by SCAPS-1D” Journal of Optical Materials, 131, 112678 (2022)

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  2. M D Haque, M H Ali, M M Hossain M S Hossain M I Hossain M A Halim A.Z.M. T. Islam, Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light, Physica Scripta,  97 085006 (2022).

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  3. M. D. Haque, M H. Ali,  and A. Z. M. T. Islam, Efficiency enhancement of WSe2 heterojunction solar cell with CuSCN as a hole transport layer: A numerical simulation approach, Journal of Solar Energy, 230, 528-537 (2021)

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  4. M. S. Hossain, M. O. Faruq, M. M. Rana, S. Sen, M D. Haque and M. M. Azad,” Sensitivity analysis for detecting chemicals by the optical chemical sensor based Photonic Crystal Fiber (PCF) in the Terahertz (THz) regime” Phys. Scr. 96 125121(2021)

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  5. M. S. Hossain, M. Barid, S. Sen, M. M. Azad and M. D. Haque “Design and analysis of heptagonal cladding with rotated-hexa elliptical core based PCF for the applications of communication sectors in the THz region. Opt Quant Electron 53, 682 (2021).

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  6.  M. D. Haque, N. Kamata, A. Z. M. T. Islam, Z. Honda, S. Yagi, and H. Yaguchi, “Photoluminescence Spectral Change of E- Band Emission in GaAs:N δ-doped Structure due to Below-gap Excitation and its Discrimination from Thermal Activation”, Journal of Electronic Materials, 49(2) 1550 (2020).

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  7. M. D. Haque, N. Kamata, A. Z. M. T. Islam, Z. Honda, S. Yagi, and H. Yaguchi, Photoluminescence Characterization of Non-radiative Recombination Centers in MOVPE Grown GaAs:N delta-doped Superlattice Structure, Journal of Optical Materials, 89, 521 (2019). Read More
  8. M. D. Haque, N. Kamata, S-I. Sato, and S. M. Hubbard,Characterization of Nonradiative Recombination Centers in Proton-Irradiated InAs/GaAs Quantum Dots by Two Wavelength Excited Photoluminescence, Japanese Journal of Applied Physics, 57, 092302, (2018).

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  9. M. D. Haque, N. Kamata, T. Fukuda, Z. Honda, S. Yagi, H. Yaguchi, and Y. Okada, Non-radiative Recombination Centers in GaAs:N delta-doped Superlattice Revealed by Two-wavelength Excited Photoluminescence, Journal of Applied Physics, 123,  161426(2018).
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  10. M. D. Haque, M. Julkarnain, A.Z. M. T. Islam, N. Kamata, and T. Fukuda,Study of Nonradiative Recombination Centers in n-GaN grown on LT- GaN and AlN Buffer Layer by Below-Gap Excitation, Advances in Material Physics and Chemistry, 8, 143, (2018).
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  11. N. Kamata, M. Suetgugu, M. D. Haque, S. Yagi, H. Yaguchi, F. Karlsson and Per Olof Holtz, Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation, Physica Status Solidi B 254, 1 (2016).

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  12. M. K. Hossain, M. D. Haque, S. Sarkar, M. A. Ali, M. M. Rahman, and M. M. Hossain, Performance analysis of intermediate band Solar Cell, American Journal of Engineering Research, 4(4) 145 (2015).

  13. M. D. Haque, M. M. Islam, M. M. Hossain and N. Sultana, Modeling and design of photovoltaic solar pannel, Institute of Engineering and Technology, 4(1) 12 (2014).
  14. M. D. Haque, M. M. Islam, M. M. Hossain, and S. Sarker, Simulation and Modeling of silicon nanowire field effect transistor, Journal of Innovation and Development Strategy, 7(1) 16 (2013).

  15. M. D. Haque, M. M. Hossain, M. M. Islam and M. M. Afzal, Modeling of photonic materials for carbon nanotube, Journal of Bangladesh Research Publications 8(1),260 (2013).


Conference Papers

  1.  M. D. Haque, N. Kamata, A. Z. M. T. Islam, M. Julkarnain, S. Yagi, H. Yaguchi, and Y. Okada “Study of nonradiative recombination centers in GaAs:N δ-doped superlattices structures revealed by below-gap excitation light”, Proceeding 5th IC4ME2 Conference, Rajshahi, Bangladesh, 2020.

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  2.  C. Negishi, M. D. Haque, N. Kamata, Z. Honda, and H. Yaguchi,Carrier Recombination Processes via Intermediate Band in GaPN Revealed by Two-Wavelength Excited Photoluminescenc, International Workshop in Nitride Semiconductor (IWN2018), 11-16 November, 2018, Kanazawa, Japan.    

  3. M. D. Haque, N. Kamata, T. Fukuda, Z. Honda, S. Yagi, H. Yaguchi, and Y. Okada, Detection of Non-radiative Recombination Centers in GaAs:N delta-doped Superlattice, The 29th International Conference on Defect in Semiconductors (ICDS-29), July 31 August 4, 2017, Matsue, Japan.    

  4. M. D. Haque, M. Julkarnain, N. Kamata, and T. Fukuda,Reduction of Defect States in n-GaN Due to AlN Underlayer Revealed by Below-Gap Excitation, The 12th International Conference on Nitride Semiconductors (ICNS-12), July 24-28, 2017, Strasbourg, France.    

  5. C. Negishi, N. Kamata, M. D. Haque, T. Fukuda, and H. Yaguchi,Radiative and Nonradiative Recombination Processes via Intermediate Band in GaPN by Two-Wavelength Excited Photoluminescence, The 12th International Conference on Nitride Semiconductors (ICNS-12), July 24-28, 2017, Strasbourg, France.

  6. M. D. Haque, N. Kamata, S-I. Sato, and S. M. Hubbard, Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two-wavelength Excited Photoluminescence, 44th IEEE Photovoltaic Specialist Conference (IEEE PVSC-44), June 25- 30, 2017, Washington D.C, USA.    

  7. N. Kamata, M. Suetgugu, M.D. Haque, S. Yagi, H. Yaguchi, F. Karlsson and Per Olof Holtz,Carrier Recombination levels in Intermediate Band type GaPN Revealed by Time Resolved and Two-wavelength Excited Photoluminescence, Compound Semiconductor Week (CSW), May 14-18, 2017, Berlin, Germany.    

Others

  1. Nishat Ahmed Samrin, Md. Mahmudul Hasan Suzan, Md. Selim Hossain, Mohammad Sarwar Hossain Mollah and Md. Dulal Haque, Analysis of COVID-19 Trends in Bangladesh: A Machine Learning Analysis, Part of the Lecture Notes on Data Engineering and Communications Technologies book series (LNDECT,volume 105), 2022.

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Awards and SCHOLARSHIPS

  1. Shaheed Habibur Rahman Hall Gold Medal Award

    Funded by: University of Rajshahi

  2. MONBUKAGAKUSHO:MEXT Scholarship

    Funded by: The Ministry of Education, Culture, Sports, Science, and Technology, Japan

  3. B.Sc (Hounours) Merit School

    Funded by: University of Rajshahi


PROJECTS

  1. Design and Analysis of Highly Efficient Transition Metal Dichalcogenide Nano-laser Embedded in Dielectric Cavity, from July 2020 to June 2021

    Funded by: Funded by Institute of Training and Research, Hajee Mohammad Danesh Science and Technology Universit

    Position: Principle Investigator

    Description: This project describe the development of transistion metal dichalcosenide nanolaser.

  2. Quantitative analysis of nonradiative recombination centers in GaPN compound semiconductor, from July 2019 to June 2020

    Funded by: Funded by Institute of Training and Research, Hajee Mohammad Danesh Science and Technology Universit

    Position: Principle Investigator

    Description: This project determines the defect level present in GaPN intermediate band semiconductors

  3. Development of sensor systems for switching ON the ventilation system to reduce heat stress in poultry at threshold-level detection of temperature and humidity, from July 2019 to June 2020.

    Funded by: Funded by Ministry of Science and Technology, People’s Republic of Bangladesh

    Position: Co-principle Investigator

    Description: This project develop different sensor system for controlling heat stress of poultry.

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